Vishay Siliconix SIZ260DT-T1-GE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET® Gen IV

Package/Case:

8-PowerWDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

80V

Current - Continuous Drain (Id) @ 25°C:

8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)

Rds On (Max) @ Id, Vgs:

24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

820pF @ 40V

Power - Max:

4.3W (Ta), 33W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-PowerPair® (3.3x3.3)