Vishay Siliconix SIS903DN-T1-GE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET® Gen III

Package/Case:

PowerPAK® 1212-8 Dual

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 P-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

6A (Tc)

Rds On (Max) @ Id, Vgs:

20.1mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

42nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2565pF @ 10V

Power - Max:

2.6W (Ta), 23W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® 1212-8 Dual