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Vishay Siliconix SIS4604LDN-T1-GE3

Part No.:
SIS4604LDN-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
PowerPAK® 1212-8
Description:
N-CHANNEL 60 V (D-S) MOSFET POWE
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SIS4604LDN-T1-GE3 Information

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Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET® Gen IV
Package/Case:
PowerPAK® 1212-8
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
15.1A (Ta), 45.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1180 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.6W (Ta), 33.7W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® 1212-8
Image SIS4604LDN-T1-GE3
Part Number SIS4604LDN-T1-GE3
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Package/Case PowerPAK® 1212-8
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 15.1A (Ta), 45.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 33.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
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