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Vishay Siliconix SIS447DN-T1-GE3

Part No.:
SIS447DN-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
PowerPAK® 1212-8
Description:
MOSFET P-CH 20V 18A PPAK1212-8
Quantity:

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SIS447DN-T1-GE3 Information

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Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
PowerPAK® 1212-8
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Rds On (Max) @ Id, Vgs:
7.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
181 nC @ 10 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
5590 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
52W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® 1212-8
Image SIS447DN-T1-GE3
Part Number SIS447DN-T1-GE3
Manufacturer Vishay Siliconix
Series -
Package/Case PowerPAK® 1212-8
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 7.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 181 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 5590 pF @ 10 V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
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