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| Image | ![]() |
| Part Number | SIA910EDJ-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Package/Case | PowerPAK® SC-70-6 Dual |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 6V |
| Power - Max | 7.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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