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Vishay Siliconix SIA533EDJ-T1-GE3

Part No.:
SIA533EDJ-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
PowerPAK® SC-70-6 Dual
Description:
MOSFET N/P-CH 12V 4.5A PPAK8X8
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SIA533EDJ-T1-GE3 Information

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Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
PowerPAK® SC-70-6 Dual
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
12V
Current - Continuous Drain (Id) @ 25°C:
4.5A
Rds On (Max) @ Id, Vgs:
34mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
420pF @ 6V
Power - Max:
7.8W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SC-70-6 Dual
Image SIA533EDJ-T1-GE3
Part Number SIA533EDJ-T1-GE3
Manufacturer Vishay Siliconix
Series TrenchFET®
Package/Case PowerPAK® SC-70-6 Dual
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 34mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 6V
Power - Max 7.8W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Dual
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