NXP USA Inc. SI9936DY,518

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

TrenchMOS™

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

5A

Rds On (Max) @ Id, Vgs:

50mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

900mW

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO