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Vishay Siliconix SI9933CDY-T1-GE3

Part No.:
SI9933CDY-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET 2P-CH 20V 4A 8SOIC
Quantity:

Unit Price:$0

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SI9933CDY-T1-GE3 Information

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Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4A
Rds On (Max) @ Id, Vgs:
58mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
665pF @ 10V
Power - Max:
3.1W
Operating Temperature:
-50°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Image SI9933CDY-T1-GE3 SI9933CDY-T1-E3
Part Number SI9933CDY-T1-GE3 SI9933CDY-T1-E3
Manufacturer Vishay Siliconix Vishay Siliconix
Series TrenchFET® TrenchFET®
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 4A 4A
Rds On (Max) @ Id, Vgs 58mOhm @ 4.8A, 4.5V 58mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 10V 665pF @ 10V
Power - Max 3.1W 3.1W
Operating Temperature -50°C ~ 150°C (TJ) -50°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
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