Vishay Siliconix SI8900EDB-T2-E1

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

10-UFBGA, CSPBGA

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual) Common Drain

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

5.4A

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

1V @ 1.1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

1W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

10-Micro Foot™ CSP (2x5)