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Vishay Siliconix SI7956DP-T1-E3

Part No.:
SI7956DP-T1-E3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
PowerPAK® SO-8 Dual
Description:
MOSFET 2N-CH 150V 2.6A PPAK SO8
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SI7956DP-T1-E3 Information

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Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
PowerPAK® SO-8 Dual
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
150V
Current - Continuous Drain (Id) @ 25°C:
2.6A
Rds On (Max) @ Id, Vgs:
105mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
1.4W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8 Dual
Image SI7956DP-T1-GE3 SI7956DP-T1-E3
Part Number SI7956DP-T1-GE3 SI7956DP-T1-E3
Manufacturer Vishay Siliconix Vishay Siliconix
Series TrenchFET® TrenchFET®
Package/Case PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 150V 150V
Current - Continuous Drain (Id) @ 25°C 2.6A 2.6A
Rds On (Max) @ Id, Vgs 105mOhm @ 4.1A, 10V 105mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds - -
Power - Max 1.4W 1.4W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual
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