Vishay Siliconix SI6562DQ-T1-GE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

8-TSSOP (0.173", 4.40mm Width)

Packaging:

Cut Tape (CT)

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

30mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id:

600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:

25nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

1W

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-TSSOP