Vishay Siliconix SI6562CDQ-T1-GE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

8-TSSOP (0.173", 4.40mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

6.7A, 6.1A

Rds On (Max) @ Id, Vgs:

22mOhm @ 5.7A, 4.5V

Vgs(th) (Max) @ Id:

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

850pF @ 10V

Power - Max:

1.6W, 1.7W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-TSSOP