Vishay Siliconix SI4931DY-T1-GE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 P-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

12V

Current - Continuous Drain (Id) @ 25°C:

6.7A

Rds On (Max) @ Id, Vgs:

18mOhm @ 8.9A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:

52nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

1.1W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOIC