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Vishay Siliconix SI4204DY-T1-GE3

Part No.:
SI4204DY-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET 2N-CH 20V 19.8A 8SOIC
Quantity:

Unit Price:$0

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SI4204DY-T1-GE3 Information

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Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
19.8A
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2110pF @ 10V
Power - Max:
3.25W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Image SI4204DY-T1-GE3
Part Number SI4204DY-T1-GE3
Manufacturer Vishay Siliconix
Series TrenchFET®
Package/Case 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 19.8A
Rds On (Max) @ Id, Vgs 4.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2110pF @ 10V
Power - Max 3.25W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
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