Vishay Siliconix SI1029X-T1-GE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

SOT-563, SOT-666

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

305mA, 190mA

Rds On (Max) @ Id, Vgs:

1.4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

750nC @ 4.5V, 1700nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

30pF @ 25V, 23pF @ 25V

Power - Max:

250mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SC-89 (SOT-563F)