Rohm Semiconductor SH8M51GZETB

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Not For New Designs

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

3A (Ta), 2.5A (Ta)

Rds On (Max) @ Id, Vgs:

170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

8.5nC @ 5V, 12.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

610pF @ 25V, 1550pF @ 25V

Power - Max:

1.4W (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP