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Rohm Semiconductor RRQ045P03TR

Part No.:
RRQ045P03TR
Manufacturer:
Rohm Semiconductor
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET P-CH 30V 4.5A TSMT6
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Unit Price:$0

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RRQ045P03TR Information

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Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
35mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1350 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
600mW (Ta)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT6 (SC-95)
Image RRQ045P03TR
Part Number RRQ045P03TR
Manufacturer Rohm Semiconductor
Series -
Package/Case SOT-23-6 Thin, TSOT-23-6
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 10 V
FET Feature -
Power Dissipation (Max) 600mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
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