Renesas Electronics Corporation RJM0603JSC-00#12

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

20-SOIC (0.433", 11.00mm Width) Exposed Pad

Packaging:

Tray

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

3 N and 3 P-Channel (3-Phase Bridge)

FET Feature:

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

20A

Rds On (Max) @ Id, Vgs:

20mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

43nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2600pF @ 10V

Power - Max:

54W

Operating Temperature:

175°C

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

20-HSOP