Renesas Electronics Corporation RBK04U04GNS-0000#HBH

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual) Common Drain

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

35A (Ta)

Rds On (Max) @ Id, Vgs:

1.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

111nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

6900pF @ 10V

Power - Max:

83W (Tc)

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-HSON (5x6)