NXP USA Inc. PQMD12Z

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

-

Package/Case:

6-XFDFN Exposed Pad

Packaging:

Bulk

Product Status:

Active

Transistor Type:

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

47kOhms

Resistor - Emitter Base (R2):

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

80 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

100nA (ICBO)

Frequency - Transition:

230MHz, 180MHz

Power - Max:

350mW

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DFN1010B-6