NXP USA Inc. PMV65XPEA215

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Bulk

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

78mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

9 nC @ 4.5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

618 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

480mW (Ta), 6.25W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

TO-236AB