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Nexperia USA Inc. PMGD780SN,115

Part No.:
PMGD780SN,115
Manufacturer:
Nexperia USA Inc.
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Description:
MOSFET 2N-CH 60V 0.49A 6TSSOP
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PMGD780SN,115 Information

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Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
490mA
Rds On (Max) @ Id, Vgs:
920mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.05nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
23pF @ 30V
Power - Max:
410mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP
Image PMGD780SN,115
Part Number PMGD780SN,115
Manufacturer Nexperia USA Inc.
Series TrenchMOS™
Package/Case 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR)
Product Status Not For New Designs
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 490mA
Rds On (Max) @ Id, Vgs 920mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.05nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 23pF @ 30V
Power - Max 410mW
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-TSSOP
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