Nexperia USA Inc. PMCXB1000UEZ

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

6-XFDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel Complementary

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

590mA (Ta), 410mA (Ta)

Rds On (Max) @ Id, Vgs:

670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V

Vgs(th) (Max) @ Id:

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1.05nC @ 4.5V, 1.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

30.3pF @ 15V, 43.2pF @ 15V

Power - Max:

285mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DFN1010B-6