Nexperia USA Inc. PHKD3NQ10T,518

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

TrenchMOS™

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

3A

Rds On (Max) @ Id, Vgs:

90mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

21nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

633pF @ 20V

Power - Max:

2W

Operating Temperature:

-65°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO