NXP Semiconductors PBSS5112PAP,115

Product attributes

Attribute value

Manufacturer:

NXP Semiconductors

Series:

-

Package/Case:

6-UDFN Exposed Pad

Packaging:

Bulk

Product Status:

Active

Transistor Type:

2 PNP

Current - Collector (Ic) (Max):

1A

Voltage - Collector Emitter Breakdown (Max):

120V

Vce Saturation (Max) @ Ib, Ic:

480mV @ 100mA, 1A

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

190 @ 100mA, 2V

Power - Max:

510mW

Frequency - Transition:

100MHz

Operating Temperature:

150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

6-HUSON (2x2)