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onsemi NVMFWD027N10MCLT1G

Part No.:
NVMFWD027N10MCLT1G
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Description:
DUAL N-CHANNEL POWER MOSFET100 V
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NVMFWD027N10MCLT1G Information

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Manufacturer:
onsemi
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
7.4A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs:
26mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
3V @ 38µA
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
720pF @ 50V
Power - Max:
3.1W (Ta), 46W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Image NVMFWD027N10MCLT1G
Part Number NVMFWD027N10MCLT1G
Manufacturer onsemi
Series -
Package/Case 8-PowerTDFN
Packaging Bulk
Product Status Discontinued at Digi-Key
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.4A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs 26mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 38µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 50V
Power - Max 3.1W (Ta), 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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