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onsemi NVLJWS011N06CLTAG

Part No.:
NVLJWS011N06CLTAG
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
6-PowerWDFN
Description:
T6 60V LL 2X2 WDFNW6
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Unit Price:$0

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NVLJWS011N06CLTAG Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
6-PowerWDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs:
13.6 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
912 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.9W (Ta), 46W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
6-WDFNW (2.05x2.05)
Image NVLJWS011N06CLTAG
Part Number NVLJWS011N06CLTAG
Manufacturer onsemi
Series -
Package/Case 6-PowerWDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs 13.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 912 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.9W (Ta), 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 6-WDFNW (2.05x2.05)
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