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Microchip Technology MSCSM70XM45CTYZBNMG

Part No.:
MSCSM70XM45CTYZBNMG
Manufacturer:
Microchip Technology
Category:
FET, MOSFET Arrays
Package:
Module
Description:
MOSFET 6N-CH 700V 52A
Quantity:

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MSCSM70XM45CTYZBNMG Information

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Manufacturer:
Microchip Technology
Series:
-
Package/Case:
Module
Packaging:
Bulk
Product Status:
Active
Technology:
Silicon Carbide (SiC)
Configuration:
6 N-Channel (3-Phase Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
700V
Current - Continuous Drain (Id) @ 25°C:
52A (Tc), 110A (Tc)
Rds On (Max) @ Id, Vgs:
44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:
2.7V @ 2mA, 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:
99nC @ 20V, 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
2010pF @ 700V, 4500pF @ 700V
Power - Max:
141W (Tc), 292W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
-
Image MSCSM70XM45CTYZBNMG
Part Number MSCSM70XM45CTYZBNMG
Manufacturer Microchip Technology
Series -
Package/Case Module
Packaging Bulk
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 6 N-Channel (3-Phase Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 52A (Tc), 110A (Tc)
Rds On (Max) @ Id, Vgs 44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.7V @ 2mA, 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 99nC @ 20V, 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 700V, 4500pF @ 700V
Power - Max 141W (Tc), 292W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package -
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