International Rectifier IRFHE4250DTRPBF

Product attributes

Attribute value

Manufacturer:

International Rectifier

Series:

HEXFET®

Package/Case:

32-PowerVFQFN

Packaging:

Bulk

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

25V

Current - Continuous Drain (Id) @ 25°C:

86A (Tc), 303A (Tc)

Rds On (Max) @ Id, Vgs:

2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 35µA, 2.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

20nC @ 4.5V, 53nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

1735pF @ 13V, 4765pF @ 13V

Power - Max:

156W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

32-PQFN (6x6)