Infineon Technologies IRF9910TRPBF-1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta), 12A (Ta)

Rds On (Max) @ Id, Vgs:

13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

11nC @ 4.5V, 23nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

900pF @ 10V, 1860pF @ 10V

Power - Max:

2W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOIC