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Infineon Technologies IRF9389TRPBF

Part No.:
IRF9389TRPBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET N/P-CH 30V 6.8A/4.6A 8SO
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Unit Price:$0

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IRF9389TRPBF Information

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
6.8A, 4.6A
Rds On (Max) @ Id, Vgs:
27mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
398pF @ 15V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Image IRF9389TRPBF
Part Number IRF9389TRPBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.8A, 4.6A
Rds On (Max) @ Id, Vgs 27mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 398pF @ 15V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SO
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