Infineon Technologies IRF8915

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tube

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

8.9A

Rds On (Max) @ Id, Vgs:

18.3mOhm @ 8.9A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

540pF @ 10V

Power - Max:

2W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO