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Infineon Technologies IRF7509TRPBF

Part No.:
IRF7509TRPBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Description:
MOSFET N/P-CH 30V 2.7A/2A MICRO8
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Unit Price:$0

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IRF7509TRPBF Information

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
2.7A, 2A
Rds On (Max) @ Id, Vgs:
110mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
210pF @ 25V
Power - Max:
1.25W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Micro8™
Image IRF7509TRPBF
Part Number IRF7509TRPBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging Tape & Reel (TR)
Product Status Last Time Buy
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.7A, 2A
Rds On (Max) @ Id, Vgs 110mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Micro8™
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