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Infineon Technologies IRF7103TRPBF

Part No.:
IRF7103TRPBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET 2N-CH 50V 3A 8SO
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Unit Price:$0

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IRF7103TRPBF Information

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
50V
Current - Continuous Drain (Id) @ 25°C:
3A
Rds On (Max) @ Id, Vgs:
130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
290pF @ 25V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Image IRF7103TRPBF IRF7103TRPBFXTMA1
Part Number IRF7103TRPBF IRF7103TRPBFXTMA1
Manufacturer Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET®
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel
FET Feature - -
Drain to Source Voltage (Vdss) 50V 50V
Current - Continuous Drain (Id) @ 25°C 3A 3A (Ta)
Rds On (Max) @ Id, Vgs 130mOhm @ 3A, 10V 130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V 290pF @ 25V
Power - Max 2W 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO PG-DSO-8-902
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