Rohm Semiconductor HS8MA2TCR1

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

8-PowerWDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

5A (Ta), 7A (Ta)

Rds On (Max) @ Id, Vgs:

80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

7.8nC @ 10V, 8.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

320pF @ 10V, 365pF @ 10V

Power - Max:

2W (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DFN3333-9DC