Rohm Semiconductor HS8K1TB

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

8-UDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta), 11A (Ta)

Rds On (Max) @ Id, Vgs:

14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

6nC @ 10V, 7.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

348pF @ 15V, 429pF @ 15V

Power - Max:

2W (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

HSML3030L10