Rohm Semiconductor HS8K11TB

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

8-UDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

7A, 11A

Rds On (Max) @ Id, Vgs:

17.9mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

11.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

500pF @ 15V

Power - Max:

2W

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

HSML3030L10