Toshiba Semiconductor and Storage GT60N321(Q)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-3PL

Packaging:

Tube

Product Status:

Obsolete

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

1000 V

Current - Collector (Ic) (Max):

60 A

Current - Collector Pulsed (Icm):

120 A

Vce(on) (Max) @ Vge, Ic:

2.8V @ 15V, 60A

Power - Max:

170 W

Switching Energy:

-

Input Type:

Standard

Gate Charge:

-

Td (on/off) @ 25°C:

330ns/700ns

Test Condition:

-

Reverse Recovery Time (trr):

2.5 µs

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P(LH)