Toshiba Semiconductor and Storage GT30J121(Q)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-3P-3, SC-65-3

Packaging:

Tube

Product Status:

Active

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

600 V

Current - Collector (Ic) (Max):

30 A

Current - Collector Pulsed (Icm):

60 A

Vce(on) (Max) @ Vge, Ic:

2.45V @ 15V, 30A

Power - Max:

170 W

Switching Energy:

1mJ (on), 800µJ (off)

Input Type:

Standard

Gate Charge:

-

Td (on/off) @ 25°C:

90ns/300ns

Test Condition:

300V, 30A, 24Ohm, 15V

Reverse Recovery Time (trr):

-

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P(N)