Toshiba Semiconductor and Storage GT10J312(Q)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:

Tube

Product Status:

Obsolete

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

600 V

Current - Collector (Ic) (Max):

10 A

Current - Collector Pulsed (Icm):

20 A

Vce(on) (Max) @ Vge, Ic:

2.7V @ 15V, 10A

Power - Max:

60 W

Switching Energy:

-

Input Type:

Standard

Gate Charge:

-

Td (on/off) @ 25°C:

400ns/400ns

Test Condition:

300V, 10A, 100Ohm, 15V

Reverse Recovery Time (trr):

200 ns

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

-