Toshiba Semiconductor and Storage GT10G131(TE12L,Q)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

8-SOIC (0.173", 4.40mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

400 V

Current - Collector (Ic) (Max):

-

Current - Collector Pulsed (Icm):

200 A

Vce(on) (Max) @ Vge, Ic:

2.3V @ 4V, 200A

Power - Max:

1 W

Switching Energy:

-

Input Type:

Standard

Gate Charge:

-

Td (on/off) @ 25°C:

3.1µs/2µs

Test Condition:

-

Reverse Recovery Time (trr):

-

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP (5.5x6.0)