Goford Semiconductor GS120R045Q4

Product attributes

Attribute value

Manufacturer:

Goford Semiconductor

Series:

-

Package/Case:

TO-247-4

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

52mOhm @ 20A, 18V

Vgs(th) (Max) @ Id:

4V @ 10mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-10V, +20V

Input Capacitance (Ciss) (Max) @ Vds:

2565 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

395W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4L