GE Aerospace GE12050EEA3

Product attributes

Attribute value

Manufacturer:

GE Aerospace

Series:

SiC Power

Package/Case:

Module

Packaging:

Bulk

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

6 N-Channel (3-Phase Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

475A (Tc)

Rds On (Max) @ Id, Vgs:

4.4mOhm @ 475A, 20V

Vgs(th) (Max) @ Id:

4.5V @ 160mA

Gate Charge (Qg) (Max) @ Vgs:

1248nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:

29300pF @ 600V

Power - Max:

1250W (Tc)

Operating Temperature:

-55°C ~ 150°C (Tc)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

Module