Goford Semiconductor G2K3N10L6

Product attributes

Attribute value

Manufacturer:

Goford Semiconductor

Series:

TrenchFET®

Package/Case:

SOT-23-6

Packaging:

Cut Tape (CT)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

3A (Tc)

Rds On (Max) @ Id, Vgs:

220mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

4.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

536pF @ 50V

Power - Max:

1.67W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-6L