Goford Semiconductor G1NP02LLE

Product attributes

Attribute value

Manufacturer:

Goford Semiconductor

Series:

TrenchFET®

Package/Case:

SOT-23-6

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

-

FET Feature:

-

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

1.3A (Tc), 1.1A (Tc)

Rds On (Max) @ Id, Vgs:

210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA, 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1nC @ 4.5V, 1.22nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

146pF @ 10V, 177pF @ 10V

Power - Max:

1.25W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-6L