Goford Semiconductor G180C06Y

Product attributes

Attribute value

Manufacturer:

Goford Semiconductor

Series:

-

Package/Case:

TO-252-5, DPAK (4 Leads + Tab), TO-252AD

Packaging:

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel, Common Drain

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

50A (Tc), 60A (Tc)

Rds On (Max) @ Id, Vgs:

17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA, 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

39nC @ 4.5V, 62nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

2429pF @ 30V, 4471pF @ 30V

Power - Max:

69W (Tc), 115W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-252-4