Goford Semiconductor G085C03D32

Product attributes

Attribute value

Manufacturer:

Goford Semiconductor

Series:

-

Package/Case:

8-PowerVDFN

Packaging:

Cut Tape (CT)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

28A (Tc), 12A (Tc)

Rds On (Max) @ Id, Vgs:

11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18nC @ 10V, 25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1085pF @ 15V, 1352pF @ 15V

Power - Max:

13W (Tc), 30W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-DFN (3.15x3.05)