IXYS FMM110-015X2F

Product attributes

Attribute value

Manufacturer:

IXYS

Series:

GigaMOS™, HiPerFET™, TrenchT2™

Package/Case:

i4-Pac™-5

Packaging:

Tube

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

150V

Current - Continuous Drain (Id) @ 25°C:

53A

Rds On (Max) @ Id, Vgs:

20mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

8600pF @ 25V

Power - Max:

180W

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

ISOPLUS i4-PAC™