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onsemi FDY1002PZ

Part No.:
FDY1002PZ
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Description:
MOSFET 2P-CH 20V 0.83A SOT563F
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Unit Price:$0

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FDY1002PZ Information

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Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
830mA
Rds On (Max) @ Id, Vgs:
500mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
135pF @ 10V
Power - Max:
446mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563F
Image FDY1002PZ FDY1002PZ-G
Part Number FDY1002PZ FDY1002PZ-G
Manufacturer onsemi onsemi
Series PowerTrench® PowerTrench®
Package/Case SOT-563, SOT-666 SOT-563, SOT-666
Packaging Tape & Reel (TR) Bulk
Product Status Active Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual) 2 P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 830mA 830mA (Ta)
Rds On (Max) @ Id, Vgs 500mOhm @ 830mA, 4.5V 500mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 4.5V 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 135pF @ 10V 135pF @ 10V
Power - Max 446mW 446mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-563F SOT-563
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