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onsemi FDS89161

Part No.:
FDS89161
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET 2N-CH 100V 2.7A 8SOIC
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Unit Price:$0

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FDS89161 Information

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Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
2.7A
Rds On (Max) @ Id, Vgs:
105mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
210pF @ 50V
Power - Max:
1.6W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Image FDS89161LZ FDS89161
Part Number FDS89161LZ FDS89161
Manufacturer onsemi onsemi
Series PowerTrench® PowerTrench®
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature - -
Drain to Source Voltage (Vdss) 100V 100V
Current - Continuous Drain (Id) @ 25°C 2.7A 2.7A
Rds On (Max) @ Id, Vgs 105mOhm @ 2.7A, 10V 105mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 10V 4.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 302pF @ 50V 210pF @ 50V
Power - Max 1.6W 1.6W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
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